JFET压磁电效应的理论分析
THEORETICAL ANALYSIS OF THE PRESSURE-MAGNETOELECTRIC EFFECT OF JFET
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摘要: 本文用标准的松弛方法研究了结型场效应晶体管的压磁电效应。利用准平面拉普拉斯方程及有限差分法计算了不同栅电压、漏电压以及n沟道硅器件不同宽长比的压力灵敏度和磁灵敏度。在P0,B=0,器件宽长比为W/L=1/2-1时,电流性压力灵敏度约为:2.5％cm2/N。据此,提出了一种有良好工作稳定性及噪声性能的力学量敏感器件结型场效应力敏管(Junction field effect-pressure sensor)。Abstract: The pressure-magnetoelectric effect of JFET is discussed by using standard relaxation techniques. A theoretical evaluation of the pressure sensitivity and Hall sensitivity of the n-channel silicon JFET with various geometries (W/L), gate voltages (VGS) and drain voltages (VDS) is made. The results show that when P0,B0, the current-pressure sensitivity is about 2.5%cm2/N, supposing W/L = 1/2-1. A junction field effect-pressure sensor with high stability and low noise is designed.
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