双栅器件的跨导和漏导
TRANSCONDUCTANCE AND DRAIN CONDUCTANCE OF DUAL-GATE FETs
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摘要: 本文将双栅MOSFET考虑成四极器件,以电流连续、电压守恒为基础,讨论了其跨导和漏导特性。所提出的分析求解方法。可推广到任何双栅结构器件。结果表明,此方法不仅简洁、适用性广;而且物理概念清楚,将三极器件和四极器件的特性联系了起来,自然地引出了双栅器件特有的耦合概念。对于所选取的单栅模型,跨导、漏导的计算值和实验值符合良好。
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关键词:
- 晶体管; FET; 跨导; 漏导
Abstract: The transconductances (gm1s,gm2s) and drain conductance (gds) of dual-gate FETs are evaluated by takinj; a dual-gate PET as a four-polar device based on current continuity and voltage conservation. This analytic method may be suitable for any kind of dual-gate FETs. The expressions of gm1s, gm2s, gds are quite clear in conception. The formulas set up the relations between single-gate FETs and dual-gate FETs, and lead to a special coupling idea of dual-gate devices. For the single-gate FET s model selected, there is a good agreement between calculated and experimental values of gm1s, gm2s and gds. -
R. V. Anand et al., IEEE Proc Pt. I,129(1982), 58.[2]J. R. Scott, R. A. Minasian, IEEE Trans. on MTT, MTT-32(1984), 243.[3]J. Houthoff, T. H. Uittenbogaard, Elecsronic Technology, 17(1983), 146.[4]R. M. Barsan, IEEE Trans. on ED, ED-28(1981), 523.[5]董忠,双栅MOSFET直流特性的模拟和分析,成都电讯工程学院硕士学位论文,1986年.[6]R. M. Barsan, et al., IEEE J. of SC, SC-17(1982), 626. -
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