Si(100)和(111)面和在其上Ni分子束外延的反射高能电子衍射研究
STUDY OF Si(100) AND (111) SURFACES AND MOLECULAR BEAM EPITAXY OF Ni ON THEM BY RHEED
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摘要: 以反射高能电子衍射的方法研究了用Ar+离子轰击和高温处理技术获得的洁净的Si(100)和(111)面,以及在室温下这些表面上分子束外延生长镍硅化物。实验获得了Si(111)77以及它的负区衍射图,Si(100)21,Si(111)1919Ni和Si(100)42Ni的表面结构。实验同时表明,在低外延生长速率下(0.150.5/min)生成的镍硅化物的晶格结构与硅基底的一样。
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关键词:
Abstract: Clean Si (100) and (111) surfaces produced by the Ar+ ion bombardment and high temperature annealing techniques, and the epitaxial growth of nickel silicides on them at room temperature using molecular beam method are studied by reflection high energy electro diffraction (RHEED). The experimental results show that Si(111)77 and its negative zone RHEED pattern, Si(100)21, Si(111)1919 Ni and Si(100)42Ni structures are obtained, and the lattice structures of nickel silicide produced during epitaxy with low growing rate (0.16--0.5 per minute) is the same as that of silicon substrate. -
Shozo Ino, Jpn. J. Applied Phys., 16(1977), 891.[2]H. Fll, Philosophical Magazine A, 45(1982), 31. -
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