双漂移(P+PNN+)雪崩二极管的计算机辅助分析
COMPUTER-AIDED ANALYSIS OF DOUBLE-DRIFT-REGION IMP ATT DIODE
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摘要: 本文报道了8mm硅双漂移雪崩二极管的计算机计算结果,并把双漂移器件与单漂移(P+NN+型)器件进行了比较,从而证实双漂移器件在输出功率和效率等方面都具有优越性,同时还研究了掺杂分布、温度、直流偏置和高频调制电压对器件特性的影响。本文为设计毫米波段双漂移雪崩二极管振荡器和放大器提供了理论数据。
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Abstract: The results calculated by computer for the double-drift-region IMPATT diode on 3 mm waveband are reported. A comparison between single-drift and double-drift diodes is presented. The advantage of double-drift devices in respect to power output and efficiency is given. At the same time, effects of doping profile, current density and RF voltage on the performences of these devices are investigated. The theoretical data for design of double-drift IMPATT oscillator and amplifier on 8 mm waveband is also given. -
D. L. Scharfetter,W.J. Evans and R. L. Johnston, Proc. IEEE, 58(1970), 1131-3.[2]W. N. Grant, Solid State Elect., 16(1973), 1189-1203.[3]R. A. Gibilin, E. F. Scherer and R. L. Wierich, IEEE Trans. on ED, ED-20(1973), 404-418.[4]W. E. Schroeder and G. I. Haddad, Proc. IEEE, 61(1973), 153-182.[5]宋文淼,方希曾,电子科学学刊, 6(1984), 400-408. -
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