|
D. V. Lang, J. Appl. Phys., 47(1976), 4986-4992.[2]K. Kondo, et al., Recombination-induced deep-level formation in GaAlAs DH 2EDS, 1981 GaAs and Related Compounds, Oiso, Japan, pp. 227-232.[3]高季林等,半导体学报,6(1985)3,245-249.[4]胡恺生等,发光与显示,1984年,第3期,第25-32页.[5]胡恺生等,发光与显示,1981年,第2期,第34-44页.[6]史一京,全国半导体化合物材料光电器件学术会议论文集,昆明,1982,283-286.[7]Zou Yuan-Xi, et al., Proc of 1985 Material Research Society Symposiu m46 Microscopic Identification of Electronic Detects in Semiconductors, San Francisco, USA.[8]Masamichi Sakounoto, J. Appl. Phys., 58(1985), 337-340, 385--388.[9]Toshro Uji, Jpn. J. Appl. Phys., 17(1978), 727-728.[10]Masami Tackikawa, et al., Jpn. J. Appl. Phys.,23(1984)12, 1594-1597.[11]E. E. Wagner, et al., J. Appl. Phys., 51(1980), 5434-5437.[12]P. K. Bhattacharya, et al., Appl. Phys. Lett., 36(1976), 664-666.[13]P. K. Bhattacharya, et al., Appl. Phys. Lett., 45(1985), 1322-1323.
|
下载:
