GaAlAs/GaAs双异质结发光管中的深能级
STUDY OF DEEP LEVELS IN Ga_(1-x)AlxAs/GaAs DH LEDs
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摘要: 本文用DLTS谱仪和单脉冲瞬态电容技术测量了光通信用GaAlAs/GaAs双异质结发光管中的深能级,对有源区掺Si和掺Ge的相同结构器件,均测得有多子陷阱存在,其能级位置分别为EC-ED0.29eV和ET-EV0.42eV。比较了外延系统中氧含量变化对有源区掺Si器件深能级的影响,以及有源区EL图象中的DSD与深能级关系,结果表明外延系统中氧含量对深能级有明显影响,而EL图象中DSD的出现率与深能级无明显关系。Abstract: Deep levels in Ga1-xAlxAs/GaAs double-heterojunction LEDs have been studied by DLTS. The Ga1-xAlxAs DH material was grown by LPE technique. The dark deitcts are ob-jerved with an infrared line scanner. The effect of the oxygen contamination on the deep levels in Si-doped active layer is found. The activation energy EC-ED0.29 eV. The DSD are sometimes generated in the emitting area. It did not related to the deep levels obviously.
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D. V. Lang, J. Appl. Phys., 47(1976), 4986-4992.[2]K. Kondo, et al., Recombination-induced deep-level formation in GaAlAs DH 2EDS, 1981 GaAs and Related Compounds, Oiso, Japan, pp. 227-232.[3]高季林等,半导体学报,6(1985)3,245-249.[4]胡恺生等,发光与显示,1984年,第3期,第25-32页.[5]胡恺生等,发光与显示,1981年,第2期,第34-44页.[6]史一京,全国半导体化合物材料光电器件学术会议论文集,昆明,1982,283-286.[7]Zou Yuan-Xi, et al., Proc of 1985 Material Research Society Symposiu m46 Microscopic Identification of Electronic Detects in Semiconductors, San Francisco, USA.[8]Masamichi Sakounoto, J. Appl. Phys., 58(1985), 337-340, 385--388.[9]Toshro Uji, Jpn. J. Appl. Phys., 17(1978), 727-728.[10]Masami Tackikawa, et al., Jpn. J. Appl. Phys.,23(1984)12, 1594-1597.[11]E. E. Wagner, et al., J. Appl. Phys., 51(1980), 5434-5437.[12]P. K. Bhattacharya, et al., Appl. Phys. Lett., 36(1976), 664-666.[13]P. K. Bhattacharya, et al., Appl. Phys. Lett., 45(1985), 1322-1323. 期刊类型引用(3)
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