摘要:
本文在改进型电荷控制模型基础上,引进GSW速度场方程,推导出异质结绝缘栅场效应晶体管(HIGFETs)的ID-VD-VG,IDS-VG,Gm,和CG等一系列静态特性方程。计算结果与文献实测值进行了比较,在VG2V,IDDS时两者符合得甚好。本文讨论了温度对Vth的影响;器件的结构参数:栅长L、栅宽W，源电阻RS,GaAlAs厚度d, GaAs迁移率和温度对Gm的影响。并指出了提高HIGFETs性能的可能途径。
Abstract:
Based on improved charge conttrol model and combining GSW velocity-field equation, a series of analytical solutions for the static characteristics of HIGFETs such as TD-VD-VG,Gm and CG are derivel. The results of calculations are compared with experimental data reported in references, within the rang of VG2V, ID TDS, they agree very well. It is pionted out that two-lengrh model must be considered in the high field region due to greater leakage current between the gate and rhe drain. The effects of temperature on Vth, and the effects of gate length and width, temperature, GaAlAs thickness, source resistance, GaAs mobility on Gm are discussed. Possible approaches for improving performances of HIGFETs are pointed out according to the above analyses.
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