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Chou S Y, Liu M Y. Nanoscale Tera-Hert metal-semiconductor-metal photodetectors[J].IEEE J. Quantum Electron.1992, 28(10):2358-2368[2]Sano E. Adevice model for metal-semiconductor-metal photodetectors and its applications to[3]optoelectronic integrated circuit simulation. IEEE Trans. ED, 1990, ED-37(9): 1964-1968.[4]Se S M, Coleman D J, Loya A. Current transport in metal- semiconductor-metal(MSM) structure[J].Solid-State Electronics.1971, 14:1209-1218[5]Song K C, Matin M A, Robinson B,et al. High performance InP/InGaAs-based MSM photode-[6]tector operating at 1.3-1.5m[J].Solid-State Electronics.1996, 39(9):1283-1287[7]李志奇,王庆康,史常忻.GaAs MSM结构光电探测器的光电特性研究.固体电子学研究与进展,1992, 12(3): 225-229.[8]Stat H, Newman P, Smith I W, et al. GaAs device and circuit simulation in spice. IEEE Trans. ED, 1990, ED-37(9): 1964-1968.[9]Lu J, Surridge R, Pakulski G, et al. Studies of high speed metal-semiconductor-metal photodetec-[10]for with a GaAs/AlGaAs/GaAs heterostructure. IEEE Trans. ED, 1993, ED-40(6): 1087-1091.[11]Sugeta T, Urisu T, Sakata S, et al. Metal-semiconductor-metal photodetector for high speed[12]optoelectronic circuits. Japanese J. Applied Physics, 1980, 19 Supplement: (19-1): 459-464.
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