硅与玻璃静电封接机理的研究
THE STUDY ON SILICON AND GLASS ELECTROSTATIC BONDING MECHANISM
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摘要: 本文利用板壳理论,分析在硅与玻璃静电封接时,硅与玻璃界面间的静电力与硅片弯曲应力的关系;推导出封接成功的条件,即界面间距d与电压V,刚度D,挠度等的关系,并进行了实验验证。Abstract: The theory of plate and shell is used to analyze the problem of electrostatic bonding of glass with silicon plate. This problem is to find Out the relation between the bending stress of silicon plate and the electrostatic force of interface. The conditions of successful bonding are found. A formula among the distance d between the two surfaces and the rigidity D, the bending deflection and the voltage V is derived, and a series of experiments to verify it is performed.
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Barth W. Sensors and System, 1982, 1(1):22-23.[2]冯景星.半导体敏感器件,1987,9(1); 34-36.[3]冯景星.扩散硅压力传感器中的几项新技术.STC89首届全国敏感元件与传感器学术会议论文集,北京:1989,11,194-197.
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