差分SPV法测量a-Si:H材料少子扩散长度的数学模型
THE MATHEMATICAL MODEL OF THE DIFFERENTIAL SPV TECHNIQUE FOR MEASURING MINORITY CARRIER DIFFUSION LENGTH OF a-Si:H FILM
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摘要: 用差分SPV法测量a-Si:H材料的少子扩散长度,可以消除被测样品背面结的影响.本文讨论了这种测量方法的数学模型,导出了测量公式,分析了影响测量结果的各种因素.Abstract: The differential measuring mode for minority carrier diffusion length of aSi:H film by SPV technique can eliminate the influence of back juction of the sample. This paper analyses mathematical model of such mode, deduces formula for practical use, and discusses various elements which affect the measured results.
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A.R. Moore, J. Appl. Phys. 56(1984)10, 2796-2802.[2]A.R. Moore.[J].J. Appl. Phys.1983,54:1-[3]L. Sakata, J. Appl. Phys. 61 (1987)5, 1916-1927.[4]R. Sohwarz, D. Slobodin, Appl. Phys. Less., 47 (1985)7, 740-747.[5]张治国,金属-非晶硅Schottky结的形成及其用于SPV法少子扩散长度的测量暨非晶硅中电于态的研究,京北工业大学电子工程学系硕士论文,北京,1991年. -
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