|
S. M. Hu, J. Vac. Sci. Technol., 14(1977), 17.[2]I. Jastraebesk, IEEE Trans. on SC, SC-17(1982), 105.[3]许康,半导体杂志,1983年,第4期,第12页;第5期,第21页.[4]J. E. Lawrence, H. R. Huff, in VLSI Electronic Microstructure Science,N G. Eingspruch ed., Vol.5, Academic Press, N. Y. (1982), p. 51.[5]H. R. Huff, Solid Stute Technol.,26(1983), 2, 89; 26(1983) 4, 211.[6]T. Hattorl, Electrochem Soc., 125(1976), 945; Solid State Technol.,22(1979) 11, 85.[7]S. Kishino, Appl. Phys. Lett, 32(1978), 11.[8]许康等,科技通讯,1983年,第2期,第23页.[9]T. Y. Dan, et al.,Appl. Phys. Lett, 30(1977), 175.[10]许康等,CIE 第3届全国半导体IC及Si材料学术会论文集,1983年,第93页.[11]C. Cleeys, et al., Semiconductor Silicon, Princeton, N. J., Electrochem. Soc., (1981), 730.[12]S. M. Hu, J. Appl, Phys., 52(1981), 3974.[13]C.W. Perce, et al., J. Appl. Phys., 11(1981), 705.[14]L. E. Katz, et al., J. Electrochem. Soc.,128(1981), 620.[15]许康,物理,14(1985),535.[16]C. R. Reed, K. M. Mar. J. Electrochem. So.c, 127(1980), 2085.[17]Chang Ou-Lee, P. J. Tobin, J. Electrochem. Soc., 133(1986). 2147.
|
下载:
