砷化镓双异质结高辐射度发光管的研制
THE STUDY OF GaAs DOUBLE HETEROJUNCTION HIGH-RADIANCE LIGHT-EMITTING DIODES
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摘要: 用液相外延技术生长GaAs-Ga1-XAlXAs双异质结材料,并制成小面积高辐射度发光二极管。辐射度高达100w/srcm2以上,尾纤(芯径60m,N.A.=0.17)输出功率最高达200W,外推工作寿命105小时。已用于1.8公里,8.448Mb/S,PCM-120路光纤电话通信系统。对器件的工作特性进行了分析,讨论了影响因素及改进途径。
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Abstract: GaAs-Ga1-x Alx As double heterojunction material was grown by liquid phase epitaxial technique, and small area high radiance light emitting diodes are made. The radiation power is above 100W/sr.cm2, output power of the tail fibre (inner diameter 60m N.A.=0.17) is 200W, and extrapolated life reaches 105 hours. It is already being used in the 1.8km 8.448 Mb/s PCM-120 route optic fibre telephone communication system. Analysis is made on the operational characteristics of the diodes. Factors affecting its proper use and approaches for improvement are discussed. -
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