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硅纳米线的固-液-固热生长及升温特性研究

邢英杰 奚中和 俞大鹏 杭青岭 严涵斐 冯孙齐 薛增泉

邢英杰, 奚中和, 俞大鹏, 杭青岭, 严涵斐, 冯孙齐, 薛增泉. 硅纳米线的固-液-固热生长及升温特性研究[J]. 电子与信息学报, 2003, 25(2): 259-262.
引用本文: 邢英杰, 奚中和, 俞大鹏, 杭青岭, 严涵斐, 冯孙齐, 薛增泉. 硅纳米线的固-液-固热生长及升温特性研究[J]. 电子与信息学报, 2003, 25(2): 259-262.
Xing Yingjie, Xi Zhonghe, Yu Dapeng, Hang Qingling, Yan Hanfei, Feng Sunqi, Xue Zengquan. Heating process of solid-liquid-solid (SLS) growth of silicon nanowires[J]. Journal of Electronics & Information Technology, 2003, 25(2): 259-262.
Citation: Xing Yingjie, Xi Zhonghe, Yu Dapeng, Hang Qingling, Yan Hanfei, Feng Sunqi, Xue Zengquan. Heating process of solid-liquid-solid (SLS) growth of silicon nanowires[J]. Journal of Electronics & Information Technology, 2003, 25(2): 259-262.

硅纳米线的固-液-固热生长及升温特性研究

Heating process of solid-liquid-solid (SLS) growth of silicon nanowires

  • 摘要: 该文报道一种直接在硅片上热生长硅纳米线的新方法。与传统的VLS生长机制不同,该方法在生长硅纳米线的过程中没有引入任何气态或液态硅源.是一种全新的固液固(SLS)生长机制。实验中使用了Ni,Au等金属作为催化剂,由Ar,H2等作为载流气体.系统压强为2.5104Pa,生长温度为950-1000℃.生长出的硅纳米线表面光滑,呈纯非晶态,直径为10-40 nm,长度可达数十微米,升温特性对硅纳米线SLS热生长起重要作用。研究了各项实验参数(包括气氛压强,加热温度及加热时间等)对硅纳米线生长的影响。
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出版历程
  • 收稿日期:  2001-08-14
  • 修回日期:  2001-11-26
  • 刊出日期:  2003-02-19

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