|
M. A. Pollack, R. E. Nahory, J. C. Dewinter and A. A. Ballman, Appl. Phys. Lett., 33(1978),314.[2]T. Yamamoto, K. Sakai and S. Akiba, IEEE. J. of QE, QE-15(1979), 684.[3]K. Nishida, K. Taguchi and Y. Matsumoto, Appl. Phys. Lett., 35(1979), 251.[4]W.A. Feibelman, Appl. Opt., 16(1977), 800.[5]M. Feng, L. W. Cook, M. M. Tashima and G. E. Stillman, J. Elect. Mater., 9(1980), 241.[6]V. G. Keramidas, S. Mahajan, H. Temkin and W. A. Bonner, Gallium Arsenide and Related Compounds, 1980 Inst. Phys. Conf. Ser. 56, 2, p. 95.[7]邬祥生,杨易,李允平,唐嫱妹,水海龙,半导体学报,3(1982), 162.[8]B. G. Cohen, Solid-State Electronics., 10 (1967), 33.[9]杨易,邬祥生,杨林宝,李允平,科技通讯,1(1981),26.[10]M. Feng; M. M. Tashima, T. H, Windharn and G. E. Stillman, Appl. Phys. Lett., 33(1978), 533.[11]K.Oe, Y. Shinado and K. Sugiyama, Appl. Phys. Lett., 33(1978), 962.[12]J. Matsui, K. Onabe, T. Kamejima and I. Hayashi, J. EIectrochem. Soc., 126(1979), 664.[13]Z. R. Zytkiewicz, Physica Status Solidi (A), 53(1979), K165.
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