硅低温本征载流子浓度的计算
CALCULATION OF THE INTRINSIC CARRIER CONCENTRA TION IN SILICON AT LOW TEMPERATURE
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摘要: 本文提出了低温区高精度的禁带宽度的表达式,获得了低温区本征载流子浓度的简明公式。考虑到禁带变窄效应的作用,本文导出了重掺杂硅中本征载流子浓度与温度和杂质浓度的关系式。与常温情况相比,低温下本征载流子浓度将随杂质浓度的上升更为剧烈地上升。Abstract: A accurate expression for the bandgap and a simple formula for the intrinsic carrier concentration at low temperature are presented. The relation between the intrinsic carrier concentration and the temperature and doping concentration in the heavily doped silicon is obtained, under the consideration of the narrowing effect of the bandgap at the heavy doping level. It is indicated that the intrinsic carrier concentration increases more rapidly with increasing the doping concentration at low temperature than at room temperature.
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