氧离子和氮离子共注人硅形成绝缘埋层的微观结构及其光学性质
OPTICAL EFFECTS AND MICROSTRUCTURE OF BURIED INSULATION LAYER FORMED BY O~+ AND N~+ CO-IMPLANTATION
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摘要: 本文利用俄歇能谱和红外吸收谱研究了硅中O+(200keV,1.81018/cm2)和N+(180keV,41017/cm2)共注入、并经1200℃、2h退火后所形成的绝缘埋层的微观结构及其光学性质。结果表明:O+和N+共注入所形成的绝缘埋层是由SiO2相和不饱和氧化硅态组成;在氧化硅埋层的两侧形成氮氧化硅薄层;表面硅-埋层的界面和埋层-体硅的界面的化学结构无明显差异。通过对波数范围在5000--1700cm-1的红外反射谱的计算机模拟,得到了该绝缘埋层的折射率、厚度等有关的参数值,这些结果与离子背散射谱的分析结果相一致。本文还讨论了绝缘埋层的形成特征。Abstract: The microstructure and optical properties of a buried layer formed by O+ (200keV, 1.81018/cm2) and N+ (180keV, 41017/cm2) co-implantation and annealed at 1200 ℃ for 2h have been investigated by Auger electron, IR absorption and reflection spectroscopic measurements. The results show that the buried layer consists of silicon dioxide and SiO2 (x2) and the nitrogen segregates to the wings of the buried layer where it forms an oxyni-tride. By detail theoretical analysis and computer simulation of the IR reflection interference spectrum, refractive index profiles of the buried layer woere obtained.
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