硅中钛的若干物理性质
SEVERAL PROPERTIES OF Ti IN SILICON
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摘要: 本文报道研究扩散掺钛的硅中深能级的结果。用DLTS法观测到三个与钛有关的深能级,即在n-Si(Ti)中有二个电子陷阱,能级位置分别为Ec0.23eV和Ec0.53eV,在p-Si(Ti)中有一个空穴陷阱,能级位置为Ev+0.32eV。详细的电容瞬态研究得到了这些能级在一定测试温度范围内的热激活能和俘获截面以及其它有关参量。本文还就测量结果对能级的键合性质和钉扎于那一能带做了讨论。
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Abstract: Some results in investigating deep levels in Ti-doped silicon are given. Three Ti associated deep levels are found by DLTS. They are two electron trap levels located at Ec- 0.23 eV and Ec - 0.53eV respectively in Ti-doped n-silicon and a hole trap level located at Ev +0.32eVin Ti-doped p-silicon. In order to study these levels further, the method of transient capacitance at constant temperature is used, and the thermal activation energy and capture cross-section in the range of experimental temperature and other related parameters are obtained. According to our experimental results, a brief discussion on the bonding feature of these levels and on their pinning to which band is given. -
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