小型超高频低噪声FET放大器的设计和性能
DESIGN AND PERFORMANCE OF COMPACT LOW NOICE GaAs MESFET AMPLIFIERS FOR UHF OPERATION
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摘要: 本文报道了UHF频段小型低噪声GaAs MESFET放大器的设计考虑、射频性能和试验结果。采用特殊的匹配网络和CAD技术使电路达到小型化和最佳化。设计的二级700MHz和三级1000MHz放大器均制作在50600.8mm3的陶瓷基片上。其射频性能分别为:功率增益GP为25dB(最佳29dB)和30dB,噪声系数NF低于1.1dB(最佳0.8dB)和1.2dB,带宽W约为40MHz(3dB)和100MHz(1dB)。用700MHz放大器装成的卫星直播电视接收机,接收图像清晰,伴音音质良好。
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关键词:
Abstract: The design considerations and experimental results of compact low noice GaAs MESFET amplifiers for UHF operation were described in this paper. The miniaturized and optimized circuits were obtained by means of special matching network and CAD technique. Both two-stage unit at 700 MHz and three-stage unit at 1000 MHz were fabricated on 5060 mm2 alumina substrate, and the power gain of 29 and 30 dB, noice figure of 0.8 and 1.2 dB and bandwidth of 40(3 dB) and 100 MHz (1 dB) were obtained, respectively, The satellite direct broadcasting receiver constructed with the 700 MHz GaAs MESFET amplifier has clear pictures and good sound. -
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