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场发射锥尖的制备及特性研究

秦明 黄庆安 魏同立

秦明, 黄庆安, 魏同立. 场发射锥尖的制备及特性研究[J]. 电子与信息学报, 1998, 20(2): 281-284.
引用本文: 秦明, 黄庆安, 魏同立. 场发射锥尖的制备及特性研究[J]. 电子与信息学报, 1998, 20(2): 281-284.
Qin Ming, Huang Qingan, Wei Tongli. FABRICATION AND CHARACTERISTICS OF FIELD EMISSION ARRAYS[J]. Journal of Electronics & Information Technology, 1998, 20(2): 281-284.
Citation: Qin Ming, Huang Qingan, Wei Tongli. FABRICATION AND CHARACTERISTICS OF FIELD EMISSION ARRAYS[J]. Journal of Electronics & Information Technology, 1998, 20(2): 281-284.

场发射锥尖的制备及特性研究

FABRICATION AND CHARACTERISTICS OF FIELD EMISSION ARRAYS

  • 摘要: 研究了倒金字塔填充型锥尖及正向刻蚀硅尖的制备工艺,采用了两种封装结构测试了场发射硅尖阵列的发射特性,并分析比较了这两种结构的特点及用于制备高频微波器件的可能性。
  • Kosmahl H G. A wide-band with high-gain small-size distributed amplifier with field-emission triodes (FE TR10DEs) for the 10 to 300 GHz frequency range[J].IEEE Trans. on ED.1989, 36(10):2728-2737[2]Spindt C A. Field-emitter-array development for high-frequency operation. J. Vac. Sci. Technol., 1993, B11(2): 468-473.[3]Qing-An Huang, Tao Xiang, Ming Qin. Improvement of frequency performance of gated-emitter by air bridge method. Proc. 7th Int. Vacuum Microelectronics Conf., France: 1994, 281-285.[4]黄庆安.Spindt型真空微三极管按比例缩小的CE规则.电子学报,1995, 23(2): 85-86.[5]Qing-An Huang, Ming Qin, Tao Xiang, et al. Silicon wafer bonding for sealed vacuum micro-electronic device. Proc. 8th Int. Vacuum Microelectronics conf., USA: 1995, 154-157.[6]Qingyi Tong, Huizhen Zhang, Ming Qin. Void elimination by lateral gap diffusion in silicon direct bonding (SDB) technology[J].Electron. Lett.1991, 27(3):288-289[7]Busta H H, Pogemiller J E, Chan W. Experimental and theoretical determinations of gate-to-emitter stray capacitance of field emitters[J].J. Vac. Sci. Technol. B.1993, 11(2):445-452
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出版历程
  • 收稿日期:  1996-10-30
  • 修回日期:  1997-03-10
  • 刊出日期:  1998-03-19

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