场发射锥尖的制备及特性研究
FABRICATION AND CHARACTERISTICS OF FIELD EMISSION ARRAYS
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摘要: 研究了倒金字塔填充型锥尖及正向刻蚀硅尖的制备工艺,采用了两种封装结构测试了场发射硅尖阵列的发射特性,并分析比较了这两种结构的特点及用于制备高频微波器件的可能性。
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关键词:
- 场致发射锥尖阵列; 键合; 微波器件
Abstract: Field emission arrays are important to vacuum microelectronic microwave devices. The downward pyramid filled cone and upward etched silicon cone are fabricated. Two kinds of packing structures are used and the emission properties of these cones are tested. The characteristics of these structures and the application for microwave devices are analyzed. -
Kosmahl H G. A wide-band with high-gain small-size distributed amplifier with field-emission triodes (FE TR10DEs) for the 10 to 300 GHz frequency range[J].IEEE Trans. on ED.1989, 36(10):2728-2737[2]Spindt C A. Field-emitter-array development for high-frequency operation. J. Vac. Sci. Technol., 1993, B11(2): 468-473.[3]Qing-An Huang, Tao Xiang, Ming Qin. Improvement of frequency performance of gated-emitter by air bridge method. Proc. 7th Int. Vacuum Microelectronics Conf., France: 1994, 281-285.[4]黄庆安.Spindt型真空微三极管按比例缩小的CE规则.电子学报,1995, 23(2): 85-86.[5]Qing-An Huang, Ming Qin, Tao Xiang, et al. Silicon wafer bonding for sealed vacuum micro-electronic device. Proc. 8th Int. Vacuum Microelectronics conf., USA: 1995, 154-157.[6]Qingyi Tong, Huizhen Zhang, Ming Qin. Void elimination by lateral gap diffusion in silicon direct bonding (SDB) technology[J].Electron. Lett.1991, 27(3):288-289[7]Busta H H, Pogemiller J E, Chan W. Experimental and theoretical determinations of gate-to-emitter stray capacitance of field emitters[J].J. Vac. Sci. Technol. B.1993, 11(2):445-452 -
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