高灵敏度非晶硅靶摄象管的研制
THE DEVELOPMENT OF a-Si:H IMAGE PICKUP TUBES WITH HIGH PHOTOSENSITIVITY
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摘要: 用大型低频辉光放电系统制造和研究了具有阻挡结构的非晶硅视象管靶,测量了靶面伏安特性和靶压对光谱响应的影响。制成了2/3英寸和1英寸两种实验样管,白光灵敏度高达2400A/lm。光谱灵敏度在整个可见光范围都较高,峰值光电导增益在0.58m附近接近0.8。信号电流随照度线性增加,值约为0.95。在工作电压下暗电流约为1-3nA。1英寸管的极限分辨率为800TVL,2/3英寸管的为700TVL。衰减惰性稍大,尚须改进。本文还讨论了此管的应用和某些尚待解决的问题。
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关键词:
- 摄象管; 非晶硅; 视象管靶
Abstract: a-Si:H vidicon targets based on the blocking structure have been deposited and investigated. The target current-voltage characteristics in dark and under illumination are measured. The photosensitivity is 2400 uA/lm. The spectral sensitivity is high over the whole visible range. The peak photoconductive gain is close to 0.8 at around 5800 A wavelength. The signal current increases linearly with light intensity, r is about 0.95. The dark current is about 1-3 nA at operating target voltage. The limiting resol... -
海宇涵,周忠毅等,关于开展非晶硅靶摄象管的探索性研究的报告,中国科学院电子学研究所内部资料,1979年.[2]科学报，1985年3月17日,第1版.[3]阿高三郎ほか,日经エレクトロニクス,1979,No. 223, p. 52.[4]Y. Imamura et al., Appl. Phys. Lett, 35(1979), 349.[5]I. Shimuzu et al., J. Appl. Phys., 51(1980), 6422.[6]S. Oda, et al., J. Appl. Phys., 52(1981), 7275.[7]S. Ishioka, et al., Jpn J. Appl. Phys., Suppl., 22-1(1983), 461.[8]C. Kusano, et al., New Imaging Device Using a-Si, Int. ED Meeting, 1983, p509.[9]E. J. Kampas, J. Appl. Phys., 53(1982), 6408.[10]海宇涵,周忠毅,真空科学与技术,5(1985),51.[11]海宇涵,周忠毅,电子科学学刊,7(1985),108.[12]S. Ishioak, Semiconductors and Semimetals, vol. 21 Part D, p75.[13]A. Moore, Appl. Phys. Lett., 31(1977), 762.[14]D. Staebler, IEEE Trans. on R., R-31(1982), 281. -
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