砷化镓表面自旋极化光电子发射
THE SPIN POLARIZED EFFECT OF PHOTOELECTRONS EMITTED FROM GaAs SURFACE
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摘要: 本文详细地介绍了在圆偏振光作用下,NEA GaAs表面发射目旋极化光电子的原理,及NEA GaAs表面的制备和装置。介绍了表面Cs-O激活的方法。在用此法激活的NEA GaAs(100)表面上可得到灵敏度为8A/mW,极化度约用35%以上的光电子束。发现清洁的GaAs表面覆盖以50%60%Cs单原子层时,光电子的发射出现第一个极大值,同时发现稳定的发射取决于铯吸附量。Abstract: The principle of the spin polarized effect of photoelectrons emitted from NEA GaAs surface which is irradiated by circularly polarized light is described in detail. The preparation of NEA GaAs surface and apparatus used also are mentioned. A photoelectron beam with sensitivity of 8 A/mW and polarization of above 35% is obtained on the NEA GaAs (100) surface in the activation with caesium and oxygen. It is found that the first maximum emission occurs as the GaAs surface is caesiated in a monolayer of 50% to 60% and unstable emission is caused by desorption of caesium.
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