InP/InGaAs(P)材料中的低温开管Zn扩散
LOW TEMPERATURE OPEN TUBE Zn DIFFUSION IN InP/lnGaAs(P)
-
摘要: 为了在InP/InGaAs(P)材料中进行精确的选择扩散,同时又要保证外延生长的多层异质结构不被破坏,提出了一种新的低温开管Zn扩散方法。该法直至在T=500℃,t=5min的条件下,重复性仍很好。应用该法研究了低温条件下Zn在InP,InGaAs(P)材料中的扩散行为。实验首次发现,Zn在InGaAsP材料中的扩散速率与材料中P含量的平方成正比。
-
关键词:
Abstract: A new method for accurate Zn diffusion in InP/InGaAs(P) at low temperature is put forward in order to keep the carrier profile in multilayers from redistribution. Several kinds of diffusion sources with different Zn contents are used in the experiment that shows good reprodu-cibility of the method. Using this method, the characteristics of low temperature Zn diffusion in InP, InGaAs and InGaAsP are studied, and it is found for the first time that the Zn diffusion, rate is proportional to the square of the phosphorus content in the materials. -
J. Shibata et al., Appl. Phys. Lett, 45(1984), 181.[2]R. E. Nabory et al., Integrated and Guided-Wave Optics, Tech. Dig. California (1982) p. Thc. 4.[3]张桂成等,电子科学学刊,5(1983)3, 95.[4]B. Tuck and A. Hooper, J. Phys. D: Appl. Phys., 8(1975), 1806.[5]N. Chand and P. A. Houston, J. Electron. Mater., 11(1982), 37.[6]Y. Matsumoto, Jpn. J. Appl. Phys., 22(1983), 1699.[7]P. N. Favennee et al., Electron. Lett., 16(1980), 832.[8] S. B. Phatak, IEEE Electron. Device Lett., EDL-3(1982), 132.[8]N. Chand and P. A. Houston, J. Electron. Mater., 14(1985), 9.[9]Y. R. Yuan et al., J. Appl. Phys., 54(1983), 6044.[10]T. Ambridge et al., Electron. Lett., 15(1979), 647. -
计量
- 文章访问数: 2084
- HTML全文浏览量: 121
- PDF下载量: 549
- 被引次数: 0
下载:
