掺锗直拉硅片三步退火本征吸除清洁区形成的研究
THE STUDY OF THE FORMATION OF DENUDED ZONE IN CZSi BY INTERNAL GETTERING THREE-STEP ANNEALING
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摘要: 运用高温-低温-高温三步退火的本征吸除工艺研究了锗的存在对硅片清洁区形成的影响。发现直拉硅中杂质锗的存在可促进氧的外扩散,抑制氧沉淀的发生并可形成较宽的清洁区。Abstract: The effect of Ge doped in CZSi on the precipitation and the defect-free zone (DFZ) formation in Ge-doped CZSi wafers after a three step gettering annealing was studied. It is found that Ge not only can promote the out-diffusion of oxygen and form wider DFZ in Ge-Doped CZSi wafer than that in the control sample, but also can suppress the formation of precipitation.
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刘莉,秦福,等.92年全国集成电路硅材料会议论文集.杭州:1992, 81-84.[2]Tetuo Fukuda, Akira Ohsawa. Appl. Phys. Lett., 1992, 60(10): 1184-1186.[3]Sun Q, Yao K H, et al. J. Appl. Phys, 1990, 67: 9313-4319.[4]Gosclc U. Appl. Phys. A, 1982, 28: 79-82. -
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