BF2+注入多晶硅栅的SIMS分析
SIMS ANALYSIS OF BF2+ IMPLANTED Si-GATE
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摘要: 文本采用SIMS技术,分析了BF2+注入多晶硅栅退火前后F原子在多晶硅和SiO2中的迁移特性。结果表明,80keV,21015和51015cm-2 BF2+注入多晶硅栅经过900℃,30min退火后,部分F原子已扩散到SiO2中。F在多晶硅和SiO2中的迁移行为呈现不规则的特性,这归因于损伤缺陷和键缺陷对F原子的富集作用。Abstract: The migration of fluorine atoms in poly-silicon and SiO2 of BF+2 implanted Si-gate before and after annealing has been analyzed using SIMS. The results show that a part of fluorine atoms of BF+2 implanted Si-gate with an energy of 80keV and doses of 21015 and 51015cm-2 after annealing diffiuse into SiO2 region of this gate. Anomalous migration of fluorine atoms is observed in both poly-silicon and SiO2. This is due to the collection of fluorine atoms in the regions of residual damage and bond defects.
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