BF2+注入多晶硅栅的SIMS分析
SIMS ANALYSIS OF BF2+ IMPLANTED Si-GATE
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摘要: 文本采用SIMS技术,分析了BF2+注入多晶硅栅退火前后F原子在多晶硅和SiO2中的迁移特性。结果表明,80keV,21015和51015cm-2 BF2+注入多晶硅栅经过900℃,30min退火后,部分F原子已扩散到SiO2中。F在多晶硅和SiO2中的迁移行为呈现不规则的特性,这归因于损伤缺陷和键缺陷对F原子的富集作用。Abstract: The migration of fluorine atoms in poly-silicon and SiO2 of BF+2 implanted Si-gate before and after annealing has been analyzed using SIMS. The results show that a part of fluorine atoms of BF+2 implanted Si-gate with an energy of 80keV and doses of 21015 and 51015cm-2 after annealing diffiuse into SiO2 region of this gate. Anomalous migration of fluorine atoms is observed in both poly-silicon and SiO2. This is due to the collection of fluorine atoms in the regions of residual damage and bond defects.
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Nishioka Y, Ohyu K, Ohji Y, Natsuaki N. Mukai K, Ma T P. IEEE Trans. on EDL, 1989, EDL-10(4): 141-143.[2]Nishioka Y, Ohyu K, Ohji Y, Natsuaki N, Mukai K. Ma T P[J].J. Appl. Phys.1989, 66(8):3909-3912[3]Wright P J, Saraswat K C. IEEE Trans. on ED, 1989, ED-36(5):879-889.[4]张廷庆,刘家璐,杨晓跃.BF2+分子离子制作浅结技术的研究.西安:西安电子科技大学鉴定资料,1988.[5]Fuse G, Hirao T, Inoue K, Takayanagi S, Yaegashi Y. J. Appl. Phys., 1982. 53(5):3650-3655.[6]Tsai M Y, Day D S, Streetman B G. J. Appl. Phys., 1979, 50(1): 188-192.[7]Tsai M Y, Streetman B G. J. Appl. Phys., 1979, 50(1):183-187. -
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