高温CMOS数字集成电路的瞬态特性分析
TRANSIENT CHARACTERISTIC ANALYSIS OF HIGH TEMPERATURE CMOS DIGITAL INTEGRATED CIRCUITS
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摘要: 本文分析了高温CMOS倒相器和门电路的瞬态特性,建立了它们的上升时间,下降时间和延迟时间的计算公式。根据本文分析的结果,高温CMOS倒相器和门电路瞬态特性变差的原因是由于MOST阈值电压和载流子迁移率降低,以及MOST漏端pn结反向泄漏电流增大的缘故。本文给出的计算结果能较好地解释实验现象。Abstract: This paper analyzes transient characteristics of high temperature CMOS inverter and gate circuits, and gives computational formulas of their rise time, fall time and delay time. It may be concluded that the transient characteristics of high temperature CMOS inverter and gate circuits deteriorate due to reduction of carrier mobility and threshold voltages of MOST's and increase of leakage currents of MOST's orain terminal pn junction. The calculation results can explain experimental phenomena.
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Shoucair F S, et al. IEEE Trans. on CHMT, 1984, CHMT-7(1): 146-153.[2]张廷庆,等.半导体集成电路.上海:上海科技出版社,1986,第165,166,168页.[3]Shoucair F S, et al.[J]. Microelectronics Reliability.1984,24(3):465-[4]Shoucair F S, et al. IEEE Trans. on ED, 1988, ED-35(11): 2424-2426.[5]施敏.半导体器件物理.北京:电子工业出版社,1987,第60页.[6]童勤义.超大规模集成物理学导论.北京:电子工业出版社,1988,第260页. -
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