正向小注入脉冲下多子陷阱响应和两种载流子俘获率之比
THE RESPONSE OF MAJORITY CARRIER TRAP UNDER THE FORWARD BIAS LOW-INJECTION PULSE AND THE RATIO OF THE CAPTURE CONSTANTS OF THE TWO KINDS OF CARRIERS
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摘要: 正向小注入下分析了p+-n结的多子陷阱响应。指出了其中的少子注入俘获效应。当p-n结反向偏压足够小,以致其响虚区中尾区的作用不容忽视时,多子陷阱的少子注入俘获效应就在其DLTS中明显地表现出来。这种效应可用于在小注入条件下,测量多子陷阱两种载流子俘获率之比Cp/Cn。
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关键词:
- 半导体物理; p-n结; DLTS
Abstract: The response of the majority carrier traps in the semiconductors p+-n junction is analysed in detail under the low-injecting conditions. It points out that the effects of the majority carrier injecting and captured by the traps may happen if the forward bias voltage is larger enough but limited within the low-injection range. Yhen the reverse bias voltage is smaller so that the response of the tail region is not neglected than of the whole response region, then the effect of the minority carriers injecting and captured will be observable in the DLTS. It can be used to measure the Cp/Cn. -
D. V. Lang, J.Appl. Phys., 45(1974), 3023.[2]A. C. Wang, C. T. Sah, J.Appl. Phys., 57 (1985), 4645.[3]傅春寅,鲁永令,曾树荣,物理学报,34(1985), 1559.[4]傅春寅,鲁永令,曾树荣,吴恩,半导体学报,8(1987), 130.[5]C. T. Sah, Solid-State Electron, 13 (1970), 759. -
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