p型硅片表面氧化雾缺陷的吸除
GETTING OF THE HAZE DEFECTS ON p-Si WAFER
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摘要: 利用快中子辐照在p型硅片中产生辐照缺陷,利用其作为热处理时硅中氧沉淀的成核中心,在硅片表面层形成洁净区和在体内形成吸杂区,能有效地抑制硅片表面氧化雾缺陷的形成.提出了较为实用的退火工艺和简单的解释.
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关键词:
- 硅片; 雾缺陷; 快中子辐照
Abstract: The irradiation defects in Si wafer introduced by fast neutron can be used to act as nuclei of oxygen precipitation. These defeccts accelerate the formarion of oxygen precipitation in denuded region as well as getting irapurity region, thus haze dtfects on Si wafer can be restraint effectively. In this paper, a more practicable annealing technology and a brief interpretation are given. -
D. Pamerantz, J. Appl. Phys., 10(1976)38, 5020-5023.[2]W. Wijaranakula et al., J. Electrochem. Soc., 137(1990)4, 1262-1265.[3]L. Katz et al., Neutron Transmutation Doping in Semiconductor, Ed. by T. M. Meese, New York,[4](1979), p. 229-230.[5]Y. H. Lee et al., Phys. Rev., 2A(1965)138, 543 -545.[6]唐建,p型111硅片氧化雾缺陷形成机理,河北工学院硕士研究生毕业论文,天津,1992年,第49页. -
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