GaInAsP/InP双异质结液相外延片的p-n结偏位
MISPLACED p-n JUNCTION IN D. H. GaInAsP/InP WAFER GROWN BY LPE
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摘要: 用扫描电镜电子束感生电流法研究了GaInAsP/InP双异质结液相外延片的p-n结偏位问题。认为Zn沾污是偏位的主要原因之一。用控制Zn的掺入量或用Mg作p型掺杂剂均可制得正常的p-n结。用电化学c-v法测试了部分样品,并与制管后发射光谱进行比较,结果相同。
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Abstract: Misplaced p-n junetion in the LPE D. H. GaInAsP/InP wafer is investigated by scanning electron microscope and electron beam-induced current method. It is shown that one of the reasons for the misplaced p-n junetion is Zn contamination. By controlling doping level of p-type dopant Zn, or using Mg as p-type dopant, the correctly located p-n junetion is obtained. The locations of the p-n junetion of some samples are measured by electrochemical c-v method. The results obtained are consistent with the emission spectrum of the LED fabricated from the wafers. -
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