|
T .E. Bell et al., IEEE Spectrum, 30(1993)1. 46-49.[2]Ali Iranmanesh, Bami Bastani, IEEE Circuits Devices Magazine, CD-8(1992)2, 14-17.[3]G.P. Li, T.H. Ning et al., IEEE Trans. on ED, ED-34(1987)11, 2246-2253.[4]Tze-Chiang Chen, K.Y. Toh et al., IEEE Electron Device Lett.,EDL-10(1989)8, 364-366.[5]Takeo Shiba, Yoichi Tamaki et al., IEEE Trans. on ED, ED-38(1991)11, 2505-2511.[6]J. Warnock, J.D. Cressler et al., IEEE Electron Device Lett., EDL-12(1991)6, 315-317.[7]H. Kabza, K. Ehinger et al., IEEE Electron Device Lett., EDL-10(1989)8, 344-346.[8]B. Davari, C.W. Koburger et al., A New Planarization Technique Using a Combination of RIE and Chemical Mechanical Polish (CMP), IEDM Tech. Dig.(1989), pp. 61-64.[9]J.D. Cressler, J. Warnoek et al., IEEE Electron Device Lett., EDL-13(1992)5, 262-264.[10]A Nouailhat, G. Giroult-Matlakowski et al., IEEE. Trans. or. ED, ED-39(1992)6, 1392-1397.[11]Y.Tamaki, T. Shiba et al., IEEE Trans, on ED, ED-39(1992)6. 1387-1391.[12]J. Warnock et al., IEEE Electron Device Lett.. EDL-11(1990)9, 475-478.[13]J.N. Burgharts et al.,IEEE Electron Desice Lets., EDL-12(1991)12, 679-681.[14]Kunihiro Suzuki, IEEE Trans. on ED, ED-38(1991)11,2512-2517.[15]Masayuki Norishima et al., IEEE Trans. on ED, ED-39(1992)1, 33-40.[16]Pong-Fei Lu, James H. Comfort et al., IEEE Electron Device Lett., EDL-11(1990)8, 336-338.[17]J.D. Cressler et al., IEEE Trans, on ED, ED-40(1993)3, 525-556.[18]E.W. Greeneich, IEEE Electron Device Lett., EDL-12(1991)1, 18-20.[19]L.M. Castaner, P. Ashburn et al., IEEE Electron Device Lett., EDL-12(1991)1, 10-12.[20]S.A. Ajuria, C.H. Gan et al., IEEE Trans. on ED, ED-39(1997)6, 1420-1427.[21][21][22]J.S. Hamel, D.J. Roulston et al., IEEE Electron Device Lett., EDL-13(1992)6, 332-334.[23]I.R.C. Post; P. Ashburn et al., IEEE Trans. on ED, ED-39(1992)7, 1717-1731.[24]H.T. Weaver et al., IEEE Circuits and Devices Magazine, Special Issue on Silicon-on-Insulator[25]Technology and Devices, CD-3(1987)4, 6-32; CD-3(1987)6, 3-31.[26]M. Rodder D.A. Antoniadis, IEEE Electron Device Lett,EDL-4(1983)6, 193-195.[27]B-Y, Tsaur, D.J. Silversmith, IEEE Electron Device Lett., EDL-4(1983)8, 269-271.[28]E.W. Greeneich, K.H. Reuss, IEEE Electron Device Lett., EDL-5(1984)3. 91-93.[29]H. Munzel, H. Stranck, IEEE Electron Device Lett., EDL-5(1984)7, 283-285.[30][28][31]B-Y. Tsaur, R.W. Mountain et al, IEEE Electron Device Lett, EDL-5(1984)11, 461-463.[32]J.C. Sturm J.F. Gibbons, IEEE Electron Device Lett., EDL-6(1985)8, 400-402.[33]J.C. Sturm, J.P. McVittie et al., IEEE Electron Device Lett., EDL-8(1987)3, 104-106.[34]Dale G. Platteter, Tom F. Cheek, Jr., IEEE Trans. on NS,NS-35(1988)6, 1350-1354.[35]O.W. Purbo, C. R, Selvakumar, IEEE Electron Device Lett., EDL-12(1991)11, 635-637.[36]G.L.Patton et al.,IEEE Electron Device Lett., EDL-11(1990)4, 171-173.[37]S.M. Sze.[J].Physics of Semiconductor Devices, Second Edition, John Willey Sons.1981,:-[38]p181.[39]G.L. Patton et al., IEEE Electron Device Lets., EDL-9(1988)4, 165-167.[40]R. People, Phys. Rev. B, 32(1985)2, 1405-1408.[41]D.V. Lang, R. People et al., Appl. Phys. Lett., 47(1985)12, 1333-1335.[42]R. People, J.C. Bean, Appl. Phys. Lett., 47(1985)3. 322-324.[43]H. Kroemer, Solid-State Electron., 28(1985)11, 1101-1103.[44]S.S. Iyer et al., IEEE Trans. on ED, ED-36(1989)10, 2043-2063.[45]C.A. King, J.L. Hoyt et al., IEEE Trans. on ED, ED-36(1989)10, 2093-2104.[46]C.L. Patton et al., IEEE Electron Device Lett., EDL-10(1989)12, 534-536.[47]J.C. Sturm, P.M. Garone et al., J.Appl. Phys., 69( 1991)1, 534-545.[48]J.C. Sturm, E.J. Prinz et al., IEEE Electron Device Lett., EDL-12(1991)6, 303-305.[49]A. Gruble, H. Kibbel et al., IEEE Electron Device Lett., EDL-13(1992)4, 206-208.[50]E.F. Crabbe, J.H. Comfort et al., IEEE Electron Device Lett., EDL-13(1992)5, 259-261.
|
下载:
