双注入型磁敏二极管的设计
A DESIGN OF DOUBLE INJECTION TYPE MAGNETO-DIODE
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摘要: 本文探讨了在P+IN+型长二极管的一个侧面设置高复合区的锗磁敏二极管的设计,给出了选择长度(l)、厚度(d)、宽度(w)和电阻率()的最佳设计关系式: /w(l/d)310.75(△T)2/I03Rth2,式中 △T为磁敏二极管的最大温升,Rth为管子的热阻,I0为通过管子的偏流。
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Abstract: A new design is proposed for long P+IN+ type Ge magnetodiode with a high recombination region on one side. The optimal relation is established between its length (l), depth (d), width () and resistivity () for designing Ge magnetodiode: (/) (l/d)3=10.75(△T)2/(I03Rth2) △T is the limit of chip temperature rise, Rth the thermal resistance, I0 the current flowing through diode. -
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