晶体管非线性失真分析
NONLINEAR DISTORTION ANALYSIS OF BIPOLARTRANSISTOR
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摘要: 本文从器件物理和结构上提出双极型晶体管非线性失真模型。模型包含8个参量:(1)有效基区展宽效应;(2)发射极电流集边效应;(3)基区电导调制效应;(4)发射结电阻的非线性效应;(5)发射结电容的非线性效应;(6)集电结电容的非线性效应;(7)寄生电容的非线性效应;(8)电流放大系数和雪崩倍增效应与电压的非线性关系。利用Taylor级数展开分析各模型参数,并编制了计算程序,定量计算了互调失真与工作频率、发射极条宽、基区宽度、发射极线电流密度,基区掺杂浓度等重要参数的关系。计算结果与实验结果基本吻合。
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关键词:
- 晶体管; 失真; 非线性分析
Abstract: An AC small-signal transistor model incorporating 8 nonlinearities using Taylor series representations is described. Based on this method, a nonlinear distortion-analysis program has been developed. It is used to compute the third-order intermodulation distortion IMs. The relations between IM3 and the operating frequency, emitter and base widths, emitter line current density and doped impurity concentration on base are obtained. -
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