BF+2注入的多晶硅薄膜快速热退火后氟行为的研究
FLUORINE BEHAVIOUR IN BF+2 IMPLANTED POLYSILICON FILMS SUBJECTED TO RAPID THERMAL ANNEALING
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摘要: 本文报道BF+2注入的多晶硅薄膜经快速热退火后的物理和电学性质。发现造成氟异常分布的原因是由于快速热退火过程中氟的外扩散以及在多晶硅/二氧化硅界面处的聚集。在注入剂量为11015和51015cm-2的样品中,经快速热退火后可以观察到氟泡。
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关键词:
- 离子注入; 快速热退火; 氟泡
Abstract: The physical and electrical properties of BF+2 implanted polysilicon film subjected to rapid thermal annealing (RTA) are presented. It is found that the out diffusion of F and its segregation at polysilicon/silicon oxide interface during RTA are the major causes of F anomalous migration. Fluorine bubbles were observed in BF+2 implanted samples at doses of 11015 and 51015cm-2 after RTA. -
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