硅n+-p结中金深受主能级DLTS中的反常现象
THE ANOMALOUS PHENOMENA ON DLTS OF GOLD DEEP ACCEPTOR LEVEL IN Si n+-P JUNCTION
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摘要: 在研究硅n+-p结中金深受主能级EA的DLTS信号强度(峰高)与多子脉冲的关系中发现,当脉冲宽度宽于1s时,峰高反而随着脉冲宽度增加而单调下降。给出了典型的实验结果,并指出这是由于EA同时具有多子及少子两种响应区的结果。
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关键词:
- 硅n+-p结; 金深受主能级; DLTS
Abstract: The relationship between the majority carrier pulse width tp and DLTS intensity of gold acceptor EA in Si n+-p junction is studied. It is found that the DLTS intensity decreases monotonously with the increasing pulse width when tp1s. Some typical experimental results are given. The EA has two response regions: the majority carrier response region and minority carrier one. Just the two response regions caused the anomalous phenomena. -
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