MOSFET中载流子能量输运计算机辅助分析
COMPUTER AIDED ANALYSIS OF CARRIER ENERGY TRANSPORT IN MOSFETs
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摘要: 本文提出了能量输运问题的二维MOSFET的数值模拟,其中计入了产生、复合以及载流子的温度梯度对器件特性的影响;还提出了改进的迁移率模型。对微米和亚微米MOSFET样品的模拟结果表明,本文所提出的模型和方法与实验符合得很好。Abstract: The two-dimensional numerical simulation of energy transport for MOS FETs is presented, in which the effect of generation, recombination and temperature gradiem of carriers on the characteristics of the devices are considered. An improved mobility model is also proposed. The numerical results of micrometer and submicrometer MOSFETs show that the present model fits esperiment very well.
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