p型Si1-xGex应变层中重掺杂禁带窄变的计算
CALCULATION OF THE BANDGAP NARROWING DUE TO HEAVY DOPING IN p-TYPE STRAINED Si1-xGex LAYERS
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摘要: 针对应变Si1-xGex的应变致价带分裂和重掺杂对裂值的影响,提出了该合金价带结构的等价有效简并度模型。模型中考虑了非抛物线价带结构。应用这个模型,计算了赝晶生长在100Si衬底上的p型Si_(1-x)Ge_x应变层的重掺杂禁带窄变,发现当杂质浓度超过约2～31019cm-3后,它在某一Ge组分下得到极大值,而当掺杂低于此浓度时,它则随Ge组分的增加单调下降。与实验报道的对比证实了本模型的有效性。
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关键词:
- 锗硅合金; 应变; 重掺杂; 能带结构
Abstract: To take the effects of strain induced splitting and non-parabolicity of valence band into account when calculating the bandgap narrowing (BGN) due to heavy doping in p-type pseu-domorphic Si1-xGex layers grown on 100 Si substrate, an equivalent effective degeneracy (EED) model is proposed for the valence band structure of the strained alloy. The calculation results agree very well with published experimental data and show that there is a maximum value of the BGN at a certain Ge fraction if dopant concentration exceeds about 2～3 1019cm-3, and that, otherwise, it will decrease continuously as Ge fraction increases. -
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