Cd和Zn在InP中扩散的研究
STUDY OF THE DIFFUSION OF Cd AND Zn IN InP
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摘要: 本文介绍了在450700℃的广阔温度范围内研究Cd和Zn向InP扩散的结果,并对结果作了比较。详细研究了Cd,Zn及其化合物等不同杂质源对扩散的影响。我们用结深(xj)的平方和时间(t)的比值(xj2/t)作为扩散速度的度量,并画出了xj2/t-1/T(温度)曲线。发现Cd源,特别是CdP2源的扩散速度较慢,容易控制它扩散的结深和浓度,昕以它是比较理想的扩散杂质源。利用Tien的中性复合体理论,解释了Cd和Zn在InP中扩散的复杂现象。
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Abstract: Study of the diffusion of Cd and Zn into InP at temperature of 450-700℃is described. The effects of various impurity sourees, such as Cd, Zn and their compounds on the diffusion are studied in detail. Using the ratio of the square of the diffusion depth x2 and the time t as the mcasure of the diffusion velocity, a plot of x2/t versus temperature T is given. It is found that the diffusion velocity of Cd is slower, especially when CdP2 is used as diffusion source, and thus the diffusion depth and concentration of Cd are easier to be controlled. So it is a more ideal diffusion impurity source. The complicated phenomena of Cd-and Zn-diffusion in InP are explained with neutral complex proposed by Tien (1979). -
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