氮流量对非晶碳膜场致电子发射的影响
INFLUENCE OF NITROGEN FLOW RATE ON FIELD ELECTRON EMISSON ON AMORPHOUS-CARBON
-
摘要: 用微波等离子体化学气相沉积设备,在陶瓷/金属钼薄膜衬底上沉积出了氮掺杂非晶碳膜,分别用扫描电子显微镜(SEM),金相显微镜及Raman谱对样品进行了分析测试,并研究了不同掺杂样品的场致电子发射特性。结果表明:在我们的实验范围内,随着氮流量的增加,发射电流密度增大,阈值电压降低。
-
关键词:
- 非晶碳膜; 场致电子发射; 电子亲和势
Abstract: Using microwave plasma-assisted chemical vapor deposition system, the nitrogen dopeed amorphaus-carbon films are obtained on the deposited molybdenum films, which are deposited on ceramic (Al2O3). The scanning electron microscopy (SEM), optical microscopy, X-ray diffraction (XRD) and Raman spectrum are used to analyze the obtained. Experimental results show that, when increasing the nitrogen, the eaission current density increases and the turn-on field decreases. -
李运钧,何金田,姚宁,张兵临,等,一种简单的金刚石薄膜场至发射器件,科学通报,1997,42(4),368-370.[2]W.Zhu,G.P,Kichanski,Jin S.et al,Electron field emission from ion-implanted diamond,Appl,Phys,Lett,1995,67(8),1157-1159.[3]王小平,李运钧,姚宁,张兵临,等,金刚石镶嵌非品碳膜表面形貌对场臻电子发射的影响,发光学报,1998,19(3):267-271.[4]Yoshiyuki Show,Rumihiko Matsuoka,Masaharn Hayshi,et al,Infiuence of defects on electron emission from diamond films,J.Appl,Phys,1998,84(11),6351-6354.[5]L.K,Cheah,Shi Xu,B.K,Tay,et al,Field emission from,Notrogen doped tearahedral amorphous carbon prepared by filtered cathodic vaemch are technique,Technical Digest of IVMC97 Kyongju,Korea,1997,112-116. -
计量
- 文章访问数: 2439
- HTML全文浏览量: 100
- PDF下载量: 420
- 被引次数: 0
下载:
