用深能级瞬态电容谱测定掺磷-Si:H的隙态密度
THE DISTRIBUTION OF DENSITY OF GAP STATES FOR PHOSPHORUS-DOPED AMORPHOUS SILICON MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY
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摘要: 正 非晶硅的隙态密度在很大程度上决定了材料的电学和光学性质,因而对非晶硅隙态密度的研究具有重要的理论和实际意义。目前,对非晶硅隙态密度分布的认识,仍存在着争议。W.E.Spear.等人首先用场效应方法测定了非晶硅的隙态密度分布,并在相当一段时间为人们所接受。但由于场效应方法在实验数据处理上存在着很大误差。另外该方法的测量结果受界面态的影响很大。J.D.Cohen等人用深能级瞬态谱(DLTS)测
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关键词:
Abstract: A density-of-state distribution in the pseudo-gap of phosphorus-doped a-Si:H material prepared by GD method has been measured experimentally by deep level tran-sient spectroscopy (DLTS). A minimum value of 71015cm-3 eV-1 has been obtained at the energy of about 0.45 eV below Ec. This physical picture is quite different from the previous one obtained by the field effect method. Some comments on the method used and the theoretical analysis are given. -
W. E. Spear and P. G. Le Comber, J. Non-Crystalline Solid, 8-10 (1972), 727.[2]N. B. Goodman, H. Fritzsche and H. Oyaki, J. Non-Crystalline Solid, 35-36(1980), 599.[3]J. D. Cohen, D. V. Lang, J. P. Harbison and J. C. Bean, Solar Cells, 2(1980), 331.[4]J. D. Cohen, D. V. Lang and J. P. Harbison, Phys. Rev. Lett.,45(1980), 197.[5]C. H. Hyun, M. S. Shur and A. Madan, Appl. phys. Lett., 41(1982), 178.[8]杜永昌,晏懋洵,物理,10(1981), 109. -
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