受主型界面态在深亚微米槽栅PMOSFET中引起退化的研究

任红霞; 郝跃

受主型界面态在深亚微米槽栅PMOSFET中引起退化的研究

任红霞,
郝跃

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出版历程
- 收稿日期: 2000-02-23
- 修回日期: 2000-07-06
- 刊出日期: 2002-01-19

Study on the degradation induced by acceptor interface state for deep-sub-micron grooved-bate PMOSFET\s

摘要

摘要: 界面态引起的器件特性的退化是深亚微米器件失效的一个重要因素。本文基于流体动力学能量输运模型,对沟道杂质浓度不同的槽栅和平面PMOSFET中受主型界面态引起的器件特性的退比进行了分析。研究结果表明同样浓度的界面态密度在槽栅器件中引起的器件特性的漂移远大于平面器件,且P型受主型界面态密度对器件特性的影响也远大于N型界面态。沟道杂质浓度不同,界面态引起的器件特性的退化不同。
- 槽栅PMOSFET; 界面态密度; 阈值电压; 漏极电流驱动能力; 特性退化
Abstract: The degradation induced by interface state is one main reason for failure occurs in deep-sub-micron MOS devices. Based on the hydrodynamics energy transport model, the degradation induced by acceptor interface state is analyzed for deep-sub-micron grooved-gate and conventional planar PMOSFET with different channel doping density. The simulation results show that the degradation induced by the same interface state density in grooved-gate PMOSFET is larger than that in planar PMOSFET and in both structure devices, the impact of P type acceptor interface state on device performance is far larger than that of N type. It also manifests that the degradation is different for the device with different channel doping density.

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参考文献(1)

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