|
Heremans P, Groseneken G, Maes H E. IEEE Trans. on ED, 1991, ED-38(4): 851-857.[2]Von Bruns S L, Anderson R L IEEE Trans. on ED, 1987, ED-34(1): 75-82.[3]Henning A K, Chen N N, Watt J T, et al. IEEE Trans. on ED, 1987, ED-34(1): 64-74.[4]Arora N D, Sharma 1VI S. IEEE Trans. on ED, 1991, ED-38(6): 1392.[5]Huang J H, Zhang G B, Liu Z H, et al. IEEE Electron. Device Lett., 1993, EDL-14(5): 268-271.[6]Tam S, Ko P K, Hu C, et al. IEEE Trans. on ED, 1982, ED-29(11): 1740-1744.[7]Drummond W E, Moll J L. J. Appl. Phys., 1971, 42(13): 5556-5562.[8]Ali-omar M, Reggiani L. Solid-State Electronics, 1987, 30(7): 693-697.[9]Caughey D M, Thomas R E. Proc. IEEE, 1967, (12): 2192-2198.[10]Tewksbury S K. IEEE Trans. on ED, 1981, ED-28(12): 1519-1529.[11]Lau D.[J].Gildenblat G, Sodini C G, et al. Low-Temperature Substrate Current Characterization of n-Channel MOSFETs, Tech. Dig. of IEDM.1985,:-et al. Low-Temperature Substrate Current Characterization of n-Channel MOSFET' target='_blank'>[12]Ridley B K. J. Phys[J].C: Solid State Phys.1983, 16:3373-[13]Crowell C R, Sae S M. Appl[J].Phys. Lett.1966, 9(6):242-[14]Ko P K. Hot-electron effects in MOSFETs, Ph. D. Dissertation, University of California, Berkeley, 1982.[15]El-Massy Y A, Boothroyd A R. IEEE Trans. on ED. 1977, ED-24(3): 254-262.
|
下载:
