砷化镓汽相外延中Cd的行为和p-n结材料的制备
THE CADMIUM INCOPORATION AND THE PREPARATION OF p-n JUNCTION MATERIALS IN Ga-AsCl3-H2 SYSTEM
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摘要: 正 一、引言 在CaAs气相外延中,除了用各种掺杂剂制得n型材料外,也有少量工作述及P型外延层的制备。鉴于P型材料可用作双漂移二极管和太阳能电池,本文在GaAsCl3-H2体系中采用元素Cd为掺杂剂,研究了Cd的掺杂行为并制得了各种结构的p-n材料
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Abstract: The incoporation and the behavior of impurity Cd in VPE of GaAs were studiecl using elemental Cd as a dopant in Ga-AsCl3-H2 system. The distribution coefficient of Cd and its solubility in GaAs were found to be 0.01-0.001 and 41018 cm-3 respectively. The relationship between the electrical properties and epitaxial parameters has been discussed. As a result, the epilayers whh p-n or p+-p-n junction were prepared using elemental S and Cd doping techniques. The materials obtained in this way have a smooth surface morphology and a good interfacial properties. -
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