硅低温双极晶体管的数值模拟
NUMERICAL SIMULATION OF LOW-TEMPERATURE BIPOLAR TRANSISTOR
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摘要: 本文讨论了有关低温双极器件模拟物理参数的低温模型和各种低温物理效应,确立了适用于低温双极器件模拟的数值分析方法,建立了适用于77-300K温度范围内硅双极器件模拟程序,最后模拟分析了一典型结构品体管的常温和低温时的工作特性。Abstract: Numerical models for the physical parameters and physical effects about numerical simulation of low-temperature bipolar transistor are discussed. The numerical approaches required for simulation of low-temperature behavior are presented. A simulation program has been given to investigate bipolar transistor behavior range of 77-300K. Finally, the characteristics of a typical bipolar transistor are simulated at 300K and 77K.
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郑茳.硅低温双极品体管的理论与优化设计:[博士论文],南京:东南大学,1994.5.[2]Blaudau W, Onton A Heinke W. Temperature dependence of the bandgap of silicon[J].J. Appl. Phys.1974, 45(4):1846-1848[3]Wagner J, et al. Band-gap narrowing in heavily doped silicon: A comparison of optical and[4]electrical data. J. Appl. Phys，1988, 63(2): 425-433.[5]Slotboom W, H. C. De Graaff. Measurement of bandgap narrowing in silicon bipolar transistors. Solid-State Electronics, 1976, 19(10): 857-862.[6]Chen Y W, et al. Two-dimensional analysis of a BiNMOS transistor operating at 77K using a[7]modified PISCES program. IEEE Trans. on Electron Devices, 1992, ED-39(2): 348-356.[8]Selberherr S. MOS device modeling at 77K. IEEE Trans. on Electron Devices, 1989, ED-36(9): 1464-1476.[9]Ghazavi P, Ho F D.A numerical model for MOSFETs from liquid-nitrogen temperate to room temperate. IEEE Trans. on Electron Device, 1995, ED-42(1): 123-131.[10]Chen Y W, James B K. Two-dimensional analysis of a Binmos transistor operating at 77K using[11]a modified PISCES program. IEEE Trans. on Electron Devices, 1992, ED-39(2): 348-357. -
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