分子束外延生长的GaAs-AlxGa1-xAs多层异质结构中的精细低维调制条纹的观察
OBSERVATION OF FINE LOW DIMENSIONAL MODULATED FRINGES IN GaAs/AlxGa1-xAs MULTILAYER HETEROSTRUCTURES GROWN BY MBI
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摘要: 应用透射式电子显微镜观察了GaAs-AlxGa1-xAs多层异质结结构中的精细低维调制条纹。在邻近GaAs-AlxGa1-xAs超晶格层的缓冲层中和与这缓冲层邻近的GaAs-AlxGa1-xAs超晶格层的小区域中发现了等宽度的精细低维调制条纹,其宽度为9.1的GaAs条纹,12的AlxGa1-xAs条纹。文中介绍了用显微密度计获得的这些条纹的密度分布结果。同时还给出了GaAs-AlxGa1-xAs 多层异质结结构的晶格像和用X射线能量散射谱技术获得的成分定量分析结果。Abstract: Fine low dimensional modulated fringes (FLDMF) by named in GaAs/ AlxGa1-xAs multilayer heterostructures using transmission electron microscopy (TEM) have been observed. Philips EM400ST and JEOL EM4000EX were used in this work. The FLDMF with equal width were discovered within the buffer layer and also within the two adjacent superlattice layers of GaAs/AlGaAs The width with 9.1 is GaAs fringes, 12 is AlGaAs fringes. Some results from the density analysis of the fringes using microdensitometer are presented. Otherwise lattice image of GaAs/AlxGa1-xAs multilayer heterostructures and analytic results of composition in GaAs/AlxGa1-xAs multilayer heterostructures by using the techniques of energy dispersive X-ray analysis (EDX) have been given.
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P. M. Petroff, J. Vac. Sci. Technol, 14 (1977), 973.[2]P. M. Petroff, et al., J. Cryst. Growth, 44 (1978), 5.[3]R. D. Dupuis, et al., Appl, Phys. Lett., 34 (1979), 35.[4]Kazuo Kajiwara, et al., Jpn. J. Appl. Phy., 14(1985) 2, 85.[5]Mutsuo Ogura, Takafumi Yao, J. Vac. Sci. Technol., B. 3(1985)2, 784.[6]R. F. C. Farrow, et al., J.Vac. Sci. Technol., A3 (1985), 60.[7]Hiroshi Okamoto et al..[J].Jpn. J. Appl. Phy..1983,22:6-[8]C. J. D. Hetherington, J. C. Barry, J. M. Bi, C. J. Humphreys, J. Grange, C. Wood, Mat.Res.Soc. Symp. Proc., 37(1985), 41-46.[9]范荣团,透射式电子显微镜分析用的半导体横截面样品的制备,电子科学学刊,待发表. -
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