多层a-Si∶H/a-SiNx∶H薄膜中氢含量的研究
A STUDY OF THE HYDROGEN CONTENT IN a-Si:H/a-SiNx:H MULTILAYER FILMS
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摘要: 将PECVD方法制备的多层a-Si∶H/a-SiNx∶H膜在N2气氛中进行不同温度的退火处理后,利用红外吸收谱、核反应方法,次级离子质谱(SIMS)和透射电镜(TEM)对膜中氢从表面渗出及其与温度的依赖关系进行了测试和分析。最后对氢的外扩散现象提出了几种可能的简单解释。Abstract: The hydrogen effusion and its temperature dependence in semiconducting amorphous a-si:H/a-SiN,:H multilayer films prepared by PECVD has been studied using IR absorption, nuclear reaction method, SIMS and TEM. Some possible interpretations are presented for out-diffusion of hydrogen in the films.
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