氧分压影响SnO2气敏传感器响应的机理
THE MECHANISM FOR THE EFFECT OF OXYGEN PARTIAL PRESSURE ON THE RESPONSE OF GAS SENSORS BASED ON SnO2
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摘要: 本文报道了一种SnO2气敏传感器敏感机理的新模型。SnO2晶粒表面势垒由3个过程控制:(1)氧吸附(作电子受主)和脱附,(2)还原性气体吸附(作电子施主)和脱附,(3)表面氧化还原反应。据此可以很好地解释实验中发现的氧分压对气敏传感器响应的影响。Abstract: A new model for gas sensors based on SnO2 is developed. The surface potential height of the SnO2 grains is controlled by: (1) Oxygen adsorption (as electron acceptor) and desorption, (2) reducing gas adsorption (as electron donor) and desorption, (3) oxidation-reduction reaction in the surface phase. The effect of oxygen partial pressure on the response of gas gensors, observed by G. Coles et al., (1991) can be well explained.
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G. Coles et al.. Sensors and Actuarors, B4 (1991)3-4, 485-491.[2]G. Coles et al., J. Phys. D, Appl. Phys., 24(1991)4, 633-641.[3]P. Clifford et al, Proc. Int. Meet, on Chemical Sensors, Fukuoka, Japan, (1983), 135-146.[4]吉林大学化学系,催化作用基础,科学出版社,1980年,第1-30页.[5]S. Morrison 著,赵壁英等译,表面化学物理,北京大学出版社,北京,1984年,第36页.[6]S. Morrison, Surface Science, 27(1971)3, 586-604. -
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