内导体偏置对矩形带状线电容影响的分析
ANALYSIS OF EFFECT ON THE CAPACITANCE OF RECTANGULAR COAXIAL LINE WITH OFFSET INNER CONDUCTOR
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摘要: 本文提出了分析计算内导体偏置的矩形屏蔽带状线电容的部分模拟电荷法。电容计算值和实验结果吻合较好。此方法可通过增大级数项数来提高计算精度。Abstract: The partial charge-simulation method is presented for calculating the capacitance of the rectangular coaxial line with offset inner conductor. The capacitance calculated using this method is in good agreement with the experimental results. The method can im-prove the accuracy by increasing the number N of the series.
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S. B. Chon, IRE Trans on MTT, MTT-3(1955), 29-38.[2]J. C. Tippet, D. C. Chang, IEEE Trans. on MTT, MTT-26(1978), 876-883.[3]G. M. Anderson, AIEE Trans., 69(1950), 728-731.[4]H. Shibata, IEEE Trans on MTT, MTT-31(1983), 385-391.[5]H. J. Riblet, IEEE Trans on MTT, MTT-27(1979), 294-298.[6]H. Shibata, IEEE Trans on MTT, MTT-30(1982), 1264-1267.[7]马西奎,电子科学学刊,8(1986), 309-316.[8]T. Chen, IRE Trans on MTT, MTT-8(1960), 510-519.[9]宁超, 电工基础实验指导书, 高等教育出版社, 1986,第99页.[10]周文表, 电子科学学刊, 8(1986), 389-396.[11]潘生根, 中国科学(A辑),1986年,第9期,第999页.[12]W. Lin, IEEE Trans on MTT, MTT-30(1984), 1981-1988.[13]曾令儒, 中国科学(A辑), 1983年, 第4期, 第357页. -
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