低噪声1.21.8GHz致冷FET放大器
A LOW-NOISE 1.2-1.8 GHz COOLED GaAs FET AMPLIFIER
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摘要: 本文介绍了低噪声1.21.8 GHz致冷FET放大器的研制工作。在20K环境温度下,带宽1.21.7GHz范围内,放大器噪声温度低于10K,最佳为4K。增益约30dB。设计了一个噪声温度自动测试系统。另外对输入电缆的噪声和总测量误差作了分析。测试总误差为2K。
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Abstract: A low-noise 1.2-1.8 GHz cooled GaAs FET amplifier with mixer bias circuit is reported. The amplifier noise temperature obtained at 20 K ambient in the frequency range of 1.2-1.7 GHz is 10 K. The lowest noise temperature is 4 K. The gain is about 30 dB. An automatic measuring instrument for noise temperature was designed. The noise effect of the input cable and the error analysis of total measuring were made. The total measurement error is 2 K. -
S. Weinreb, Electronics Division Internal Report No. 220, NRAO, Sept. 1981.[2]D. R. Williams, W. Lum and S, Weinreb, Micrvmavc J., 23(1980), 73.[3]S. Weinreb, IEEE Trans. on MTT, MTT-28(1980), 1041.[4]C. A. Liechti and R. A. Larrick, ibid.,MTT-24(1976), 376.[5]P. Wolf, IBM J. Res. Develop., 14(1970), 125.[6]M. Schneider, Bell Sys. Tech. J., 48(1969), 1421.[7]T. Suzuki, A. Nara, M. Nakatoni and T. Ishii, IEEE Trans. on MTT, MTT-17(1979), 1070.[8]H. Fukui, ibid., MTT-27(1979), 643. -
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