电子辐照微氮直拉硅单晶的深能级的研究
STUDY OF THE DEEP LEVELS IN ELECTRON IRRADIATED CZ-S1 SLIGHTLY DOPED WITH NITROGEN
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摘要: 本文研究了电子辐照在氮保护气氛中生长的直拉硅单晶中引入的深能级。没有发现可检测的与氮有关的深能级。
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关键词:
- 电子辐照; 微氮直拉硅单晶; 深能级
Abstract: The deep levels in electron irradiated CZ silicon single crystal grown in pure nitrogen protective atmosphere has been studied. It is pointed out that there is no measurable deep level related to nitrogen. -
Evwarage A O, Baliga B J. J. Electrochem. Soc., 1977, 124(6): 913-916.[2]Brotherton S D, Bradley P. J. Appl. Phys., 1982, 53(8): 5720-5731.[3]阙端麟,李立本,林玉瓶.中国专利,CN8500295, 1985.[4]Lang D V. J. Appl. Phys., 1974, 45(7): 3014-3022.[5]Watkins G D, Corbett J W, Walker R M. J. Appl. Phys., 1959, 30(8): 1198-1203. -
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