Abstract: Asenic ions are implanted with doses of 5101151015 cm-2 into LPCVD polysilicon films o nSiO2 substrate, which have been recrystallized with CW Ar+ laser before implantation. Electrical measurements show that its resistivity is lowered and its mobility is inereased significamtly at low doping concentration (1017 As+cm-3). Plasma hydrcgen annealing is performed on laser recrystallized samples. The electrieal character is ics of plasma hydrogen annealed samples are close to that of single-crystalline silicon. Based on the existing theoretical modelsforconduction in polysilicon, a new formula for large grain polysilicon has been proposed, with help of which a good agreement between the theory and experimental results is achieved in the range of doping concentration from 1016cm-3 to 1020cm-3.