激光再结晶和氢退火对多晶硅电学性质的影响
THE INFLUENCE OF LASER RECRYSTALLIZATION AND PLASMA HYDROGEN ANNEALING ON THE ELECTRICAL PROPERTIES OF POLYSILICON
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摘要: 连续Ar+激光再结晶能使多晶硅的电阻率下降,迁移率显著增高,对离子注入剂量为5101151015cm-2的多晶硅经激光再结晶后再进行等离子氢退火,能使其电学性质得到进一步改善,更接近于单晶硅.掺杂浓度为11017cm-3时,电阻率从1.2cm下降到0.45cm,迁移率从 62cm2/Vs增高到 271cm2/Vs,电激活能从 0.03eV下降到-0.007eV,晶界陷阱态密度从3.71011cm-2下降到 1.71011cm-2)。本文在现有多晶硅导电模型的基础上.提出了大晶粒(L=15m)多晶硅的计算公式。结果表明,在掺杂浓度在1101611020cm-3的范围内,理论和实验符合较好。
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Abstract: Asenic ions are implanted with doses of 5101151015 cm-2 into LPCVD polysilicon films o nSiO2 substrate, which have been recrystallized with CW Ar+ laser before implantation. Electrical measurements show that its resistivity is lowered and its mobility is inereased significamtly at low doping concentration (1017 As+cm-3). Plasma hydrcgen annealing is performed on laser recrystallized samples. The electrieal character is ics of plasma hydrogen annealed samples are close to that of single-crystalline silicon. Based on the existing theoretical modelsforconduction in polysilicon, a new formula for large grain polysilicon has been proposed, with help of which a good agreement between the theory and experimental results is achieved in the range of doping concentration from 1016cm-3 to 1020cm-3. -
邹世昌,沈宗雍,林成鲁,倪如山,林梓鑫,姚良骐,朱桂枫,电子学报,1983年,第5期,第1页.[2]S. Kawamura, N. Sasaki, T. Iwai, M. Nakano and M. Takagi, IEEE Electron Device Letters,EDL-4 (1983 ), 366.[3]中野元雄,电子材料,23(1984), 54.[4]J.Y. W. Seto, J. Appl. Phys., 46(1975), 5247.[5]N. C. C. Lu, L. Gerzberg, C. Y. Lu and J. D. Meindl, IEEE Trans. on ED, ED-28 (1981), 818.[6]M. M. Mandurah, K. C. Saraswat and T. I. Kamins, ibid ED-28 (1981), 1163.[7]N. C. C. Lu, L. Gerzberg, C. Y. Lu and J. D.Meindl, ibid, ED-30(1983), 137.[8]J. P. Colinge, E. Demoulin and H. Morel, IEDM Tech. Dig., Dec. 1982.[9]J. G. Fossum and A. O. Conde, IEEE Trans. on ED, ED-30(1983), 933. -
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