在p+GaAs体单晶材料上进行的NEA活化实验
EXPERIMENTS OF ACTIVATION TO NEA WITH A BULK p+ GaAs
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摘要: NEA活化实验是利用体单晶材料进行的,未经任何外延或真空解理手续。为确立活化工艺,特别是表面清洁处理规范,作了相应AES分析。借助于测量样品附近高纯Al的熔点以校准及控制样品表面的温度。在不太好的本底真空(210-7610-7Pa)条件下,活化好的GaAs样品之白光光电灵敏度可达1000A/lm以上。Abstract: The activation experiments have been conducted with bulk p+ GaAs single crystal samples without any additional epitaxy or cleavage in vacuum. AES analysis is used to assist the establishment of surface cleaning processing. The easy determination of fusion point of pure Al nearby the sample helped us out the surface temperature control problem. The samples treated at relatively low background vacuum (2-610-7Pa) have a white light photoemission as high as 1000A/lm.
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