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1985 Vol. 7, No. 4

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Articles
DIFFRACTION THEORY AND ENCINEERING CALCULATION OF OPEN RESONATORS OF THE C1RCULAR AND COAXIAL WAVEGU1DE TYPES FOR GYROTRON
Zhu Jinlin, Wu Hongshi
1985, 7(4): 241-246.
Abstract:
By using the method of transverse-section, the reflective coefficient of diffraction in the open-end of resonators with slowly varying eross-section under general unsym-metrical mode condifions have been found by introduction of a phase correction fa...
A S-BAND 2.5 MW HIGH-POWER BROADBAND KLYSTRON
Ding Yaogen, Niu Delu, Lu Xiaohou, Li Daokun, Liu Congmao, Zhu Yunshu, Liu Tieshan
1985, 7(4): 247-253.
Abstract:
In ths paper, the design considerations of the high- efficiency high- gain broadband klystron are described. Its buncher has been studied by using small signal gain and large sigual efficiency programs. The buncher bandwidth of 10% with small signal ...
COMPLETE DIRECTED TREES ANALYSIS METHOD FOR LINEAR ACTIVE NETWORKS
Huang Ruji
1985, 7(4): 254-266.
Abstract:
The concepts of positive (negative) root complete directed trees and positive (negative) root complete directed k-trees and a positive (negative) root complete directed trees analysis method for linear active networks are presented. This method is th...
NOVEL REALIZATION OF UNIT ELEMENT WAVE SWITCHED CAPACITOR FILTER
Gu Qunshan, Wang Wenxuan
1985, 7(4): 267-275.
Abstract:
In this paper some novel adaptor circuits are proposed to realize the unit element wave switched eapacitor filters driven by two phase clock signals. These circuits are very insensitive to the bottom plate parasitic capacitanees. To realize an adapto...
DESIGN OF A BROADBAND HIGH-DIRECTIVITY DIRECTIONAL COUPLER
Yang Kun
1985, 7(4): 276-287.
Abstract:
By using available tbeoretical results, a 0.11-2GHz, -20 dB, dual-directional coupler is designed. The associated practical design procedure and algorithm can be used as a gcncral procedure for designing several types of couplers or MIC transmission ...
B SPLINE ALGORITHM FOR GEOMETRIC TRANSFORMATION OF DIGITAL IMAGE AND HARDWIRED IMPLEMENTATION
Pan Jianqiang
1985, 7(4): 288-296.
Abstract:
In this paper, the algorithm of using B spline function for geometric transformation of digital image is presented. Given a group of special regular controlling points, B spline function for transformation is formed. The algorithm guarantees precise ...
STUDY OF THE DIFFUSION OF Cd AND Zn IN InP
Pang Yongxiu, Sun Bingyu
1985, 7(4): 297-303.
Abstract:
Study of the diffusion of Cd and Zn into InP at temperature of 450-700℃is described. The effects of various impurity sourees, such as Cd, Zn and their compounds on the diffusion are studied in detail. Using the ratio of the square of the diffusion de...
IRRADIATION DAMAGES IN ELECTRON BEAM LITHOGRAPHY
Zhu Wenzhen, Liang JunhouGe Huang, Liang Jiuchun
1985, 7(4): 304-310.
Abstract:
The irradiation damages to Al gate MOS capacitors in electron beam lithography (EBL) and the effects of annealing on damages at low temperature (500℃) are given. The degrees of damages depend on the eleetron energies (10-30keV) and the charge dosages...
FABRICATION OF JOSEPHSON TUNNEL JUNCTION WITH SUSPENDED METAL MASK
Shi Xianqing, Yang Caibing, Cao Xiaoneng, Ma Jindi, Li Xizhi, Huang Jizhang, Li Xiaoli
1985, 7(4): 311-314.
Abstract:
A small area Josephson tunnel junction is fabricated with suspended metai mask which is made from ordinary razor blades. The junction overlap is formed by two succeeding evaporations of susperconductor materials at oblique angles. The advantages of t...
VERIFICATION OF THE PHYSICAL REASON FOR THE CURRENT GAIN FALL-OFF AT HIGH CURRENTS
Lin Zhaohui, Xu Huiying
1985, 7(4): 315-318.
Abstract:
Starting from the temperature characteritics of the transistor current gain, the temperature-dependent law of the collector current just as the current gain begins to fall-off is studied theoretically and experimentally. It is verified that the physi...
THE CADMIUM INCOPORATION AND THE PREPARATION OF p-n JUNCTION MATERIALS IN Ga-AsCl3-H2 SYSTEM
Peng Ruiwu, Xu Chenmei, Li Chuiyu, Wang Bohong
1985, 7(4): 319-322.
Abstract:
The incoporation and the behavior of impurity Cd in VPE of GaAs were studiecl using elemental Cd as a dopant in Ga-AsCl3-H2 system. The distribution coefficient of Cd and its solubility in GaAs were found to be 0.01-0.001 and 41018 cm-3 respectively....